Power Semiconductors
IGBT
High-speed switching performance and high-voltage capabilities
An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current capabilities of a bipolar transistor. Fuji Electric’s IGBT modules are designed for use as switching elements for power converters of variable speed drives for motors, uninterruptable power supplies and others.
Series List: X series 650 V, 1200 V, 1700 V, 3300V Class
Products
Features of IGBT module X series
1. Low loss
Optimised modules (thinner and smaller structure of the IGBT and diode chips)
reduce power losses during inverter operation.*
*compared with the V series (6th generation)
2. Miniturization
The innovative insulating plate improves the heat dissipation of the module. By reducing power dissipation and suppressing heat generation, a footprint that is about 36 % smaller than that of the predecessor product has been achieved.
3. High Temperature Operation
Continuous operation at 175 °C through optimised chip, improved package reliability and heat resistance.
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