High-speed switching performance and high-voltage capabilities
An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current capabilities of a bipolar transistor. Fuji Electric’s IGBT modules are designed for use as switching elements for power converters of variable speed drives for motors, uninterruptable power supplies and others.
Features of IGBT module X series
1. Low loss
Optimised modules (thinner and smaller structure of the IGBT and diode chips)
reduce power losses during inverter operation.*
*compared with the V series (6th generation)
The innovative insulating plate improves the heat dissipation of the module. By reducing power dissipation and suppressing heat generation, a footprint that is about 36 % smaller than that of the predecessor product has been achieved.
3. High Temperature Operation
Continuous operation at 175 °C through optimised chip, improved package reliability and heat resistance.
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