Skip to content

SiC Modules

SiC Modules

SiC (Silicon carbide) devices have excellent properties that enable high blocking voltage, low loss, high frequency and high temperature operation. Power semiconductors made of long-life SiC significantly reduce energy consumption and can be used to develop smaller and lighter products.


  • Significant loss reduction through the use of SiC trench gate MOSFET – 70 % reduction compared to 7th Generation silicon IGBT (X-Series)
  • Packages are compatible to conventional Si-IGBT modules
  • STD package for high temperature operation (Tjmax 175 °C)
  • Low inductance packages


  • Smaller passive components due higher switching frequency
  • Higher efficiency
  • Compact design of application design

Get in contact

Our experts will answer any further questions you have about Fuji Electric and our technologies.

Contact now