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SiC Devices
SiC Schottky Barrier Diode

SiC Schottky Barrier Diode

A SiC Schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. 
They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.


Series List

Schottky Barrier Diodes (Single)
Schottky Barrier Diodes (Dual)

  • Low IR SBD
  • SBD


  • High efficiency
  • Miniaturization
  • Reduced LC filter and unit size (compared to the 2-level type)
  • Lower system costs due to fewer switching losses


  • Lower conduction loss than conventional products
  • Decrease device temperature in whole temperature range
  • Higher surge current to enhance reliability

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