
Power Semiconductors
SiC Modules

SiC Modules
SiC (Silicon carbide) devices have excellent characteristics that enable low loss, high frequency and high temperature operation. With SiC power semiconductors, energy consumption can be significantly reduced, and smaller and lighter xEV drivetrain components can be developed.
Fuji Electric’s SiC modules are available in flexible 2-level and 3-level topology.
The 2-level topology offers a straightforward solution for three-phase systems. It strikes an effective balance between cost and performance for xEV traction inverters and is a well-established technology with simple and reliable control.
The 3-level topology enables customer to significantly reduce the losses in the electric motor of an xEV drivetrain. This consequently reduces the motor temperature and therefore allows for a high, continuous power output.
Features
• Fuji Electric 1200 V 3G SiC MOSFET
• Scalable current rating up to 1000 A
• Revolutionary 3D wiring structure
- 2 level and 3 level options
- Flexible half-bridge design
- Cu or Al PinFin or closed water coolers
- AQG 324 qualified
Benefits
• Very low stray inductance
• High temperature operation up to 200 °C
• Universal fit due to adapter frame
• Available with or without cooler
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