IGBT | HPnC
HPnC (High Power next Core)
Fuji Electric offers the HPnC module, which is suitable for high power applications, like Solar (PV), Wind and Railway. The two versions, Industrial and Traction, are tailored to the specific applications. The HPnC module integrates a half-bridge circuit and is available with Si-IGBT and SiC-MOSFET technology in the 1,700 – 3,300 V voltage rating.
Series list
High Power Module HPnC X series 1700 V, 3300 V Class
Features
- Low power dissipation
- Low stray inductance
- Low saturation voltage
- Improved package design
- High reliability
Benefits
- The applied X series or SiC MOSFET chip technology induce lowest losses during inverter operation.
- The optimized internal layout results in a 76% lower stray inductance against the predecessor HPM package.
- By developing a new package for high power applications, easy paralleling and good scalability can be achieved.
- Ultrasonic welded terminals and application specific baseplates result in high thermal cycling capability.
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