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Power Semiconductors
SiC 2-Level Modules

SiC 2-Level Modules

Fuji Electric’s 2‑level SiC modules provide a flexible and modular platform for xEV traction inverter systems. Designed for three‑phase applications, the 2‑level topology offers a simple, robust and proven platform, making it an ideal choice for customers seeking an effective balance between performance, reliability and system cost. Its modular design enables easy scalability across different power classes and vehicle platforms, supporting streamlined inverter development and design flexibility.

By combining SiC technology with Fuji Electric’s low‑inductance 3D‑Wiring structure, the 2‑level modules achieve very low stray inductance and excellent switching performance. This helps minimize switching losses, improve efficiency and support compact inverter designs with reduced weight and volume. The result is a highly flexible 2‑level SiC solution that enables efficient, reliable and scalable xEV drivetrain systems.

Features

  • Based on Fuji 3G Trench‑MOSFET

  • 1200V up to 935A

  • 750V up to 1235A

  • Revolutionary 3D wiring structure
     

  • AQG 324 qualified

  • Optional 4in1 DC‑DC & Exciter

  • Cu or Al PinFin or closed water coolers

     

Benefits

  • Very low stray inductance

  • High temperature operation up to 200 °C

  • High reliability

  • Universal fit due to adapter frame

  • Available with or without cooler

     

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