Power Semiconductors
SiC 2-Level Modules
SiC 2-Level Modules
Fuji Electric’s 2‑level SiC modules provide a flexible and modular platform for xEV traction inverter systems. Designed for three‑phase applications, the 2‑level topology offers a simple, robust and proven platform, making it an ideal choice for customers seeking an effective balance between performance, reliability and system cost. Its modular design enables easy scalability across different power classes and vehicle platforms, supporting streamlined inverter development and design flexibility.
By combining SiC technology with Fuji Electric’s low‑inductance 3D‑Wiring structure, the 2‑level modules achieve very low stray inductance and excellent switching performance. This helps minimize switching losses, improve efficiency and support compact inverter designs with reduced weight and volume. The result is a highly flexible 2‑level SiC solution that enables efficient, reliable and scalable xEV drivetrain systems.
Features
Based on Fuji 3G Trench‑MOSFET
1200V up to 935A
750V up to 1235A
Revolutionary 3D wiring structure
AQG 324 qualified
Optional 4in1 DC‑DC & Exciter
Cu or Al PinFin or closed water coolers
Benefits
Very low stray inductance
High temperature operation up to 200 °C
High reliability
Universal fit due to adapter frame
Available with or without cooler
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