Power Semiconductors
SiC Modules

Low-loss SiC performance with flexible 2-level and 3-level inverter topologies

SiC (Silicon carbide) devices have excellent characteristics that enable low loss, high frequency and high temperature operation. With SiC power semiconductors, energy consumption can be significantly reduced, and smaller and lighter xEV drivetrain components can be developed. Fuji Electric's SiC modules are available in flexible 2-level and 3-level topology, both with very low stray inductance thanks to our 3D-Wiring technology.